Simulation of Resistive Switching Memories (RRAMs)

July 10, 2014

This is a scientific visualization of the operation process that takes place in resistive switching memories. The physical simulations were carried out by M. A. Villena, J.B. Roldán and F. Jiménez-Molinos, from University de Granada, Spain. The experimental results were provided by M.B. González and F. Campabadal from Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain.

 

The video shows how the conduction takes place in Resistive Switching Memories. The formation and rupture of conductive nanofilaments in the HfO2 layer (the insulator between two electrodes) is the mechanism that controls the resistance of the devices and allows its use for memory applications. The reset process is based on the thermally assisted diffusion of metallic species from the conductive filament to the surrounding oxide.

 

This video is supplementary material of scientific publications.

 

- A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs 
- An in-depth study of thermal effects in reset transitions in HfO2based RRAMs 
- Simulation of thermal reset transitions in resistive switching memories including quantum effects

 

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Marco A. Villena, PhD. - Physics and simulation of electronic devices

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