Marco A. Villena holds a PhD (with honors) in Physics and Space Science at the University of Granada, Spain, in 2015. His thesis focused on the modeling and development of a novel simulation tools for RRAM (Resistive Random Access Memories) devices called SIM2RRAM.


Now, he is physicist/scientist at Applied Materials in Reggio Emilia, Italy. Previously, he was a Postdoctoral researcher in the Soochow University, Suzhou, China and postdoctoral fellow in Stanford University, California, USA. His research interests focus on development of new physical model and simulation tools for RRAM devices based on 2D materials. In addition, he has designed new methods of automatic analysis for the experimental measurements of these devices. He is an expert user of the MATLAB software and other programming languages.



University of Granada (Spain)


University of Granada (Spain)


University of Granada


PhD in Physics

Thesis: "Study, modeling and simulation of RRAM memories"

Master degree

“Methods and advanced techniques in Physics”

Bachelor degree in Physics



LinkedIn Learning


University of Michigan, USA


LinkedIn Learning


Stanford University, USA

Strategic Negotiation

Certificate number: AepCjgsg3f8MOe1nvvdaw2vNY8r1

Applied Plotting, Charting & Data representation in Python

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Data Visualization for Data Analysis and Analytics

Certificate number: AdnnUCt-6TnUHUPYjDbfvK87NTgp

Machine Learning

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Professional Activities

2019 -

Applied Materials, Italy

2017 - 2019

Stanford University, USA

2016 - 2019

Soochow University, China


University of Granada, Spain

Physicist/scientist at R&D department

Postdoctoral fellow

18 months

Postdoctoral researcher

External researcher collaborator




Winner of the Suzhou NANO-CIC postdoctoral fellow

Prize: 30,000 USD

Scientific Activities







Member of the technical committee of IPFA 2019

Reviewer of Scientific Reports, Nature Publishing group and IEEE Publishing group.

Leader of discussion group. The IEEE IIRW workshop

Chair of organizing committee. ChinaRRAM workshop,  Suzhou, China

Member, Research Network “Institute of Electrical and Electronics Engineers”

Member, Network of Researchers China-Spain. “RICE”

Scientific Software Developed


Simulation tool for RRAM memories based on Finite-elements methods.

Split-DOS for VASP

Software for managing and analysis of density of state data calculated by VASP.

SCIR (Structure Classification by Image Recognition)
Software for automatic classification of crystallographic structures by image recognition techniques.

Software for the automatic detection of Reset event during I-V curve measurement on memristor. This software has been designed to work with Keysight B1500A semiconductor parameter analyzer. (software for internal use only at Mario Lanza’s group, Soochow University)


  1. Marco A. Villena, Blanka Magyari-Köpe, Yoshio Nishi, Paul C. McIntyre, Mario Lanza, "Effect of IrO2 spatial distribution on the stability and charge distribution of Ti1-xIrxO2 alloys," Chemistry of Materials 31(21), 8742-8751 (2019).

  2. M. A. Villena, M. B. González, F. Jimenez-Molinos, F. Campabadal, J. B. Roldan, J. Suñe, E. Romera and E. Miranda, “Simulation of thermal reset transitions in resistive switching memories including quantum effects,” J. Appl. Phys. 115, 214504 (2014).

  3. M. A. Villena, F. Jimenez-Molinos, J. B. Roldan, J. Suñe, S. Long, X. Lian, F. Gamiz and M. Liu, “An in-depth simulation study of thermal reset transitions in resistive switching memories,” J. Appl. Phys. 114, 144505 (2013).

  4. Fei Hui, Marco Villena, Wenjing Fang, Ang-Yu Lu, Jing Kong, Yuanyuan Shi, Xu Jing, Kaichen Zhu, and Mario Lanza, "Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices," 2D materials, 5(3), 031011 (2018).

  5. Mario Lanza, H.-S. Philip Wong, Eric Pop, Daniele Ielmini, Dimitri Strukov, Brian C. Regan, Luca Larcher, Marco A. Villena, Jianghua J. Yang, Ludovic Goux, Attilio Belmonte, Yuchao Yang, Francesco M. Puglisi, Jinfeng Kang, Blanka Magyari-Köpe, Eilam Yalon, Anthony Kenyon, Mark Buckwell, Adnan Mehonic, Alexander Shluger, Haitong Li, Tuo-Hung Hou, Boris Hudec, Deji Akinwande, Ruijing Ge, Stefano Ambrogio, Juan B. Roldan, Enrique Miranda, Jordi Suñe, Kin Leong Pey, Xing Wu, Nagarajan Raghavan, Ernest Wu, Wei D. Lu, Gabriele Navarro, Weidong Zhang, Huaqiang Wu, Runwei Li, Alexander Holleitner, Ursula Wurstbauer, Max Lemme, Ming Liu, Shibing Long, Qi Liu, Hangbing Lv, Andrea Padovani, Paolo Pavan, Ilia Valov, Xu Jing, Tingting Han, Kaichen Zhu, Shaochuan Chen, Fei Hui, Yuanyuan Shi, "Recommended methods to study resistive switching devices," Advanced Electronic Materials, 1800143 (2018).

Full list of papers

Funded Projects

1. Fabricación, caracterización, simulación, modelado de dispositivos de conmutación resistiva

Entity: Ministerio de Economía, Industria y Competitividad (Spain)

From: 01/01/2018 to 31/12/2020

Researcher in charge: Juan Bautista Roldán Aranda and Francisco Jiménez Molinos

Funding: 114,950 €

Reference: TEC2017-84321-C4-3-R

Technical Skills

Programming Languages

Design & Simulation


  • Python

  • Matlab

  • Linux Bash

  • Visual Basic .NET

  • Fortran

  • Ginestra (involved in the development of this tool)

  • VASP

  • PSpice

  • Virtual NanoLab

  • FreeCAD

  • Gmsh

  • Blender

  • Linux (SUSE, Ubuntu)


  • CrystalMaker

  • Gimp 2

  • Microsoft Office