Resistive Switching | Marco A. Villena

MARCO A. VILLENA, PhD

Marco A. Villena holds a PhD (with honors) in Physics and Space Science at the University of Granada, Spain, in 2015. His research interests focus on development of new physical model and simulation tools for new electronic devices. After 18 months working at Stanford University (California, USA), and 3 years as Postdoctoral researcher at Soochow University (Suzhou, China) at Mario Lanza's Group, currently is physicist/researcher at Applied Materials.

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Lanza Research Group

The Lanza Laboratory is located at Soochow University. The Lanzalab is lead by Prof. Mario Lanza and focus on the design, synthesis, characterization and modelling of next generation electronic devices, including resistive switching memories, field effect transistors and MEMS.

Lanzalab

China RRAM Internationa Workshop

The China RRAM International Workshop launches its first edition on June 12th-14th of 2017 at Soochow University, with the objective of becoming the major forum in China for discussion on resistive random access memories and related applications.

China RRAM

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MY LATEST POST

On 12th-13th of June took place the first ChinaRRAM International Workshop at Soochow University (Suzhou, China). The conference, which was chaired by Prof. Mario Lanza and had the support of Wiley-VCH, focused on discussing the status and prospects of resistive random access memory devices (RRAM) ...

The video shows how the conduction takes place in Resistive Switching Memories. The formation and rupture of conductive nanofilaments in the HfO2 layer (the insulator between two electrodes) is the mechanism that controls the resistance of the devices and allows its use for memory applications. The reset process is based on ...

Marco A. Villena, PhD