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MARCO A. VILLENA, PhD

Marco A. Villena holds a Ph.D. (with honors) in Physics and Space Science at the University of Granada, Spain, in 2015. His research interests focus on modeling and simulation of electronic devices and materials. He has a long experience in these fields, both in academia (KAUST, Stanford University, etc.) and in the industry (Applied Materials).

USEFUL LINKS

APPLIED MDLxâ„¢ GINESTRAâ„¢ SIMULATION SOFTWARE

Ginestraâ„¢ is a software product designed to simulate the operation and electrical characteristics of modern logic (e.g., FinFET, FeFET) and memory (e.g., Flash, RRAM, CBRAM, FeRAM, PCM) devices, with a particular focus on dielectric-related phenomena and novel materials. The software is based on a multiscale modeling approach and relies on a comprehensive physics-based description of charge/ion transport; charge trapping; and material modifications due to different phenomena such as degradation, polarization switching, phase change, and more.

China RRAM Internationa Workshop

The China RRAM International Workshop launches its first edition on June 12th-14th of 2017 at Soochow University, with the objective of becoming the major forum in China for discussion on resistive random access memories and related applications. 

Lanza Research Group

The Lanza Laboratory is located at Soochow University. The Lanzalab is lead by Prof. Mario Lanza and focus on the design, synthesis, characterization and modelling of next generation electronic devices, including resistive switching memories, field effect transistors and MEMS.

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