MARCO A. VILLENA, PhD
Marco A. Villena holds a PhD (with honors) in Physics and Space Science at the University of Granada, Spain, in 2015. His research interests focus on development of new physical model and simulation tools for new electronic devices. After 18 months working at Stanford University (California, USA), and 3 years as Postdoctoral researcher at Soochow University (Suzhou, China) at Mario Lanza's Group, currently is physicist/researcher at Applied Materials.
MY LATEST POST
On 12th-13th of June took place the first ChinaRRAM International Workshop at Soochow University (Suzhou, China). The conference, which was chaired by Prof. Mario Lanza and had the support of Wiley-VCH, focused on discussing the status and prospects of resistive random access memory devices (RRAM) ...
The video shows how the conduction takes place in Resistive Switching Memories. The formation and rupture of conductive nanofilaments in the HfO2 layer (the insulator between two electrodes) is the mechanism that controls the resistance of the devices and allows its use for memory applications. The reset process is based on ...